CJP15H03 mosfet equivalent, n-channel mosfet.
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS
APPLICATIONS
z Power sw.
1. GATE 2. DRAIN
3. SOURCE
FEATURES z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche .
TO-220-3L-C
The CJP15H03 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
1. GATE 2. DRAIN
3. SOURCE
FEATURES z High density cell design for ultra low.
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