such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z Hig.

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Designed for high voltage, high speed switching appli.

CJP12N60

CJP10N60

CJP1117-1.5

CJP1117-1.8

CJP1117-2.5

CJP1117-3.3

CJP1117-5.0

CJP1117-ADJ

CJP15H03

CJP16N25

CJP02N60

CJP02N65

CJP02N80

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