CJD30N10 mosfet equivalent, n-channel power mosfet.
* High density cell design for ultra low RDS(on)
* Special process technology for high ESD capability
* Fully characterized avalanche voltage and current
.
such as
power supplies, converters, power motor controls and bridge circuits.
FEATURES
* High density cell design.
This advanced high voltage MOSFET is designed to stand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain-to-source diode fast recovery time.
TO-256
1. GATE 2. DRAIN
1 23
3. SOURCE
Desig.
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