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CJAC50P03 - P-Channel MOSFET

Description

to provide excellent RDS(ON) with low gate charge.

Features

  • High density cell design for ultra low RDS(ON).
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJAC50P03
Manufacturer JCET
File Size 1.15 MB
Description P-Channel MOSFET
Datasheet download datasheet CJAC50P03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN:%5×6-8L Plastic-Encapsulate MOSFETS CJAC50P03 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PDFN:%5×6-8L -30V 7mΩ@-10  V -50A   DESCRIPTION The CJAC50P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS APPLICATIONS  Excellent package for good heat dissipation  Special process technology for high ESD capability  Battery and loading switching MARKING CJAC50P03 = Part No.
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