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CJAC10H03 - N-Channel MOSFET

Description

The CJAC10H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • High density cell design for ultra low RDS(ON).
  • Fully characterized avalanche voltage and.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD current.
  • Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJAC10H03
Manufacturer JCET
File Size 1.18 MB
Description N-Channel MOSFET
Datasheet download datasheet CJAC10H03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5×6-8L Plastic-Encapsulate MOSFETS CJAC10H03 V(BR)DSS 30 V N-Channel Power MOSFET RDS(on)MAX ID   2.5mΩ@10V  3.5mΩ@4.5V  100A PDFNWB5×6-8L DESCRIPTION The CJAC10H03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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