CJAB35N03 mosfet equivalent, n-channel mosfet.
* High density cell design for ultra low RDS(ON)
* Fully characterized avalanche voltage and
* Excellent package for good heat dissipation
* Special pro.
FEATURES
* High density cell design for ultra low RDS(ON)
* Fully characterized avalanche voltage and
* Ex.
The CJAB35N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
* High density cell design for ultra low RDS(ON)
* Fully characterized aval.
Image gallery
TAGS
Download