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JCET

CESDLC5V0L4 Datasheet Preview

CESDLC5V0L4 Datasheet

ESD Protection Diode

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-553 Plastic-Encapsulate Diodes
CESDLC5V0L4
Low Capacitance Quad Array for ESD Protection
SOT-553
DESCRIPTION
The CESDLC5V0L4 is designed to protect voltage sensitive components from
ESD. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, MP3 players, digital cameras
and many other portable applications where board space is at a premium.
FEATURES
z Four Separate Unidirectional Configurations for Protection
z Low Leakage Current <1μA @ 5 Volts
z Small Package
z Low Capacitance
z Complies to USB 1.1 Low Speed & Full Speed Specifications
z These are Pb-Free Devices
BENEFITS
z Protects Four Lines Against Transient Voltage Conditions
z Minimize Power Consumption of the System
z Minimize PCB Board Space
TYPICAL APPLICATIONS
z Instrumentation Equipment
z Serial and Parallel Ports
z Microprocessor Based Equipment
z Notebooks, Desktops, Servers
z Cellular and Portable Equipment
54
12 3
A,Jun,2011




JCET

CESDLC5V0L4 Datasheet Preview

CESDLC5V0L4 Datasheet

ESD Protection Diode

No Preview Available !

ELECTRICAL CHARACTERISTICS (Ta = 25unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Ratings (Ta=25unless otherwise noted)
Parameter
Peak Power Dissipation @ 8 X 20 μs @TA= 25°C (Note 1)
Steady State Power -- 1 Diode (Note 2)
Thermal Resistance JunctiontoAmbient
Above 25 °C, derate
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
Lead Solder Temperature (10 Seconds Duration)
Symbol
Ppk
PD
Limit
20
150
Unit
W
mW
RΘJA
833 /W
Tjmax
Tj, Tstg
TL
150
-55 ~ +150
260
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress
ratings only. Functional operation above the recommended. Operating conditions is not implied.
Extended exposure to stresses above the recommended operating conditions may affect device
reliability.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
Device
CESDLC5V0L4
Device
Marking
5H
Breakdown
voltage
VBR @ 1mA(Volts)
Min Mon Max
6.0 6.5 7.2
Leakage
current
IRM @ VRM
VRWM
5.0
IRWM
(μA)
1.0
VC
Max @IPP
VC IPP
(V) (A)
11 1.6
Capacitance
@VR=0V Bias
(pF)
(Note 3)
Capacitance
@VR=3V Bias
(pF)
(Note 3)
Max Max
14 11.5
1. Non-repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad.
3. Capacitance of one diode at f = 1MHz, Ta = 25°C
A,Jun,2011


Part Number CESDLC5V0L4
Description ESD Protection Diode
Maker JCET
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