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JCET

CESDBLC5V0D3 Datasheet Preview

CESDBLC5V0D3 Datasheet

ESD Protection Diode

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
CESDBLC5V0D3 ESD Protection Diode
SOD-323
DESCRIPTION
The CESDBLC5V0D3 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z Reverse Working (stand-off) Voltage: 5.0 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC6100042 Level 4 ESD Protection
Maximum Ratings @Ta=25
IEC6100042(ESD)
ESD Voltage
Parameter
Air
Contact
Per Human Body Model
Per Machine Model
Symbol
Limit
±
±
16
400
Total Power Dissipation on FR-5 Board (Note 1)
PD 200
Thermal Resistance JunctiontoAmbient
RΘJA
625
Lead Solder Temperature Maximum (10 Second Duration)
TL 260
Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.62 in.
Unit
KV
KV
V
mW
/W
A,Oct,2011




JCET

CESDBLC5V0D3 Datasheet Preview

CESDBLC5V0D3 Datasheet

ESD Protection Diode

No Preview Available !

ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted)
Symbol
IPP
VC
VRWM
IR
VBR
IT
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise noted)
Device*
Device
Marking
VRWM
(V)
Max
IR(μA)
@VRWM
Max
VBR(V)@IT
(Note2)
Min Max
IT
mA
VC
@IPP=5A
V
CESDBLC5V0D3 H 5.0 0.1 5.8 7.8 1 12
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25.
C(pF)@
VR=0V,f=1MHz
Typ Max
11 12
A,Oct,2011


Part Number CESDBLC5V0D3
Description ESD Protection Diode
Maker JCET
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CESDBLC5V0D3 Datasheet PDF






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