CESDB5V0D3
CESDB5V0D3 is ESD Protection Diode manufactured by JCET.
DESCRIPTION
The CESDB5V0D3 is designed to protect voltage sensitive ponents from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium.
FEATURES z Reverse working (stand-off) Voltage: 5.0 V z Low Leakage z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 16 k V) Per Human Body Model z IEC61000- 4- 2 Level 4 ESD Protection z This is a Pb- Free Device
Maximum Ratings @Ta=25℃
Parameter
IEC61000- 4- 2(ESD) ESD Voltage
Air Contact Per Human Body Model Per Machine Model
Total Power Dissipation on FR-5 Board (Note 1)
Thermal Resistance Junction- to- Ambient
Lead Solder Temperature
- Maximum (10 Second Duration)
Junction and Storage Temperature Range
Symbol
PD RΘJA
TL Tj, Tstg
Limit ±30 ±30 16 400 150
-55 ~ +150
Unit
KV V m W ℃/W ℃ ℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the remended. Operating conditions is not implied. Extended exposure to stresses above the remended operating oonditions may affect device reliability. 1. FR- 5 = 1.0 x 0.75 x 0.62 in.
A,Jun,2011
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Symbol
IPP VC VRWM IR VBR IT C
Parameter
Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Device+
Device Marking
VRWM (V)
Max
IR (μA) @ VRWM Max
VBR (V) @ IT (Note 2)
Min Max
IT m A
VC @IPP = 5...
