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JCET

CESDB5V0D3 Datasheet Preview

CESDB5V0D3 Datasheet

ESD Protection Diode

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
CESDB5V0D3 ESD Protection Diode
SOD-323
DESCRIPTION
The CESDB5V0D3 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
FEATURES
z Reverse working (stand-off) Voltage: 5.0 V
z Low Leakage
z Response Time is Typically < 1 ns
z ESD Rating of Class 3 (> 16 kV) Per Human Body Model
z IEC6100042 Level 4 ESD Protection
z This is a PbFree Device
Maximum Ratings @Ta=25
Parameter
IEC6100042(ESD)
ESD Voltage
Air
Contact
Per Human Body Model
Per Machine Model
Total Power Dissipation on FR-5 Board (Note 1)
Thermal Resistance JunctiontoAmbient
Lead Solder Temperature Maximum (10 Second Duration)
Junction and Storage Temperature Range
Symbol
PD
RΘJA
TL
Tj, Tstg
Limit
±30
±30
16
400
150
833
260
-55 ~ +150
Unit
KV
KV
V
mW
/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only.
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating oonditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.62 in.
A,Jun,2011




JCET

CESDB5V0D3 Datasheet Preview

CESDB5V0D3 Datasheet

ESD Protection Diode

No Preview Available !

ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Symbol
IPP
VC
VRWM
IR
VBR
IT
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
Device+
Device
Marking
VRWM
(V)
Max
IR (μA)
@ VRWM
Max
VBR (V) @ IT
(Note 2)
Min Max
IT
mA
VC
@IPP = 5 A
V
CESDB5V0D3
B5
5.0
1.0
5.8 8.8 1.0
9.0
*Other voltages available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
IPP(A)
Max
12.5
VC (V)
@Max IPP
Max
15
C (pF)@
VR=0V,f=1MHz
Typ
26.5
A,Jun,2011


Part Number CESDB5V0D3
Description ESD Protection Diode
Maker JCET
PDF Download

CESDB5V0D3 Datasheet PDF






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