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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SD1815 TRANSISTOR (NPN)
FEATURES
z Low Collector-to-Emitter Saturation Voltage z Excllent Linearity of hFE z High fT z Fast Switching Time
MAXIMUM RATINGS (Ta=25℃ unless otherwise note)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
120
VCEO
Collector-Emitter Voltage
100
VEBO
Emitter-Base Voltage
6
IC Collector Current -Continuous
3
PC Collector Power Dissipation
1
TJ Junction Temperature
150
Tstg Storage Temperature
-55 to +150
Unit V V V A W
℃ ℃
TO-252-2L
1. BASE 2. COLLECTOR 3.
2SD1815 Datasheet
