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RTAN430T2 - TRANSISTOR

Download the RTAN430T2 datasheet PDF. This datasheet also covers the RTAN430x variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (RTAN430x_IsahayaElectronicsCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RTAN430X SERIES TRAwNwSwIS.DTOatRaSWheITeHt4UR.EcSoImSTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE FEATURE Built-in bias resistor (R1=4.7kΩ) Small package for easy mounting. High reverse hFE Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)(@IC=10mA/IB=0.5mA) Low on Resistance Ron=0.80Ω(TYP.)(@VI=5V) APPLICATION muting circuit , switching circuit OUTLINE DRAWING RTAN430T2 (PRELIMINARY) 0.2 0.8 0.2 Unit:mm RTAN430M 2.1 0.425 1.25 0.425 0.25 2.0 1.3 0.65 0.65 0.3 ① ②③ ① ②③ 1.2 0.8 0.4 0.4 0.9 0.7 0~0.1 0.15 0.5 EQUIVALENT CIRCUIT R1 B (IN) C (OUT) E (GND) JEITA, JEDEC:- ISAHAYA:T-USM TERMINAL CONNECTOR ①:BASE ②:EMITTER ③:COLLECTOR RTAN430U 1.6 0.4 0.8 0.4 ① ②③ JEITA:SC-70 JEDEC:- TERMINAL CONNECTOR ①:BASE ②:EMITTER ③:COLLECTOR RTAN430C 2.5 0.5 1.5 0.