RFL1N18 Datasheet | Intersil

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289. January 1998 Features - 1A, 180V and 200V - r DS(ON) = 3.65Ω - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Ordering Information PART NUMBER RFL1N18 RFL1N20 PACKAGE TO-205AF TO-205AF BRAND RFL1N18 RFL1N20 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 5-1 RFL1N18, RFL1N20 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified RFL1N18 180 180 1 5 ±20 8.33 0.0667 -55 to 150 300 260 RFL1N20 200 200 1 5 ±20 8.33 0.0667 -55 to 150 300 260 UNITS V V A A V W W/o C o C o C o C Drain to Source Breakdown Voltage (Note 1)- - - - . . VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1)- - - - . VDGR Continuous Drain Current- -...