RFL1N18 Overview
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289.
RFL1N18 Key Features
- 1A, 180V and 200V
- rDS(ON) = 3.65Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”