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RFD8P05 - P-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 8A, 50V.
  • rDS(ON) = 0.300Ω.
  • UIS SOA Rating Curve.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD8P05 RFD8P05SM RFP8P05.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
RFD8P05SM P-Channel Power MOSFET
RFD8P06 P-Channel Power MOSFET
RFD8P06E P-Channel Power MOSFET
RFD8P06ESM P-Channel Power MOSFET
RFD8P06LE P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 File Number 2384.2 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09832. Features • 8A, 50V • rDS(ON) = 0.