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IRFR214 - N-Channel Power MOSFETs

Download the IRFR214 datasheet PDF. This datasheet also covers the IRFU214 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Key Features

  • 2.2A, 250V.
  • rDS(ON) = 2.000Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • High Input Impedance.
  • 150oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR214 IRFU214.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFU214_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFR214 Power MOSFET Fairchild Semiconductor
IRFR214 Power MOSFET International Rectifier
IRFR214 Power MOSFET Vishay Siliconix
IRFR214 N-Channel MOSFET INCHANGE
IRFR214A Power MOSFET Samsung

Other Datasheets by Intersil (Renesas)

Part Number Description
IRFR220 N-Channel Power MOSFETs
IRFR110 N-Channel Power MOSFETs
IRFR120 N-Channel Power MOSFETs
IRFR320 N-Channel Power MOSFETs
IRFR410 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for highpower bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits. Formerly developmental type TA17443. Features • 2.2A, 250V • rDS(ON) = 2.