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HUF76429S3S - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.022Ω, VGS = 10V - rDS(ON) = 0.025Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER Thermal Impedance Models - www. semi. Intersil. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

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📁 Similar Datasheet

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Other Datasheets by Intersil (Renesas)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HUF76429P3, HUF76429S3S October 1999 File Number 4672.1 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) HUF76429P3 Symbol GATE SOURCE HUF76429S3S D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.022Ω, VGS = 10V - rDS(ON) = 0.025Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER Thermal Impedance Models - www.semi.Intersil.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE BRAND HUF76429P3 TO-220AB 76429P HUF76429S3S TO-263AB 76429S NOTE: When ordering, use the entire part number.