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HS1-65647RH-Q - Radiation Hardened 8K x 8 SOS CMOS Static RAM

Description

The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM.

This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology.

Features

  • 1.2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day.
  • Latch-up Free.
  • LET Threshold >250 MEV/mg/cm2.
  • Low Standby Supply Current 10mA (Max).
  • Low Operating Supply Current 100mA (2MHz).
  • Fast Access Time 50ns (Max), 35ns (Typ).
  • High Output Drive Capability.
  • Gated Input Buffers (Gated by E2).
  • Six Transistor Memory Cell.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HS-65647RH August 1995 Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram AI ROW ROW DECODER 128 X 512 MEMORY ARRAY Features • 1.
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