Part number:
HGTP7N60C3D
Manufacturer:
Intersil Corporation
File Size:
176.05 KB
Description:
N-channel igbt.
HGTP7N60C3D Datasheet (176.05 KB)
Datasheet Details
HGTP7N60C3D Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in
HGTP7N60C3D Datasheet (176.05 KB)
Datasheet Details
HGTP7N60C3D
Intersil Corporation
176.05 KB
N-channel igbt.
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