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HGTP1N120CND Datasheet - Intersil Corporation

HGTP1N120CND N-Channel IGBT

HGTP1N120CND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high

HGTP1N120CND Datasheet (80.18 KB)

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Datasheet Details

Part number:

HGTP1N120CND

Manufacturer:

Intersil Corporation

File Size:

80.18 KB

Description:

N-channel igbt.

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HGTP1N120CND N-Channel IGBT Intersil Corporation

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