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Intersil Electronic Components Datasheet

HCTS27MS Datasheet

Radiation Hardened Triple 3-Input NOR Gate

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HCTS27MS
September 1995
Radiation Hardened
Triple 3-Input NOR Gate
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCTS27MS is a Radiation Hardened Triple 3-Input
NOR Gate. A Low on all inputs forces the output to a High state.
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL
PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14
TOP VIEW
A1 1
B1 2
A2 3
B2 4
C2 5
Y2 6
GND 7
14 VCC
13 C1
12 Y1
11 C3
10 B3
9 A3
8 Y3
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14
TOP VIEW
A1
B1
A2
B2
C2
Y2
GND
1 14
2 13
3 12
4 11
5 10
69
78
VCC
C1
Y1
C3
B3
A3
Y3
The HCTS27MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS27MS is supplied in a 14 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
Functional Diagram
An
Bn
Yn
Ordering Information
Cn
PART
NUMBER
HCTS27DMSR
HCTS27KMSR
HCTS27D/
Sample
HCTS27K/
Sample
HCTS27HMSR
TEMPERATURE SCREENING
RANGE
LEVEL
PACKAGE
-55oC to +125oC Intersil Class
S Equivalent
14 Lead SBDIP
-55oC to +125oC Intersil Class
S Equivalent
14 Lead
Ceramic
Flatpack
+25oC
Sample
14 Lead SBDIP
+25oC
Sample
+25oC
Die
14 Lead
Ceramic
Flatpack
Die
TRUTH TABLE
INPUTS
OUTPUTS
An Bn Cn
Yn
LLL
H
L LH
L
LHL
L
L HH
L
HL L
L
HLH
L
HH L
L
HHH
L
NOTE: L = Logic Level Low, H = Logic level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
430
Spec Number 518643
File Number 3055.1


Intersil Electronic Components Datasheet

HCTS27MS Datasheet

Radiation Hardened Triple 3-Input NOR Gate

No Preview Available !

Specifications HCTS27MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (tr, tf) . . . . . . 100ns/V Max.
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Quiescent Current
SYMBOL
(NOTE 1)
CONDITIONS
ICC VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
IOH
VOL
VOH
IIN
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIN = VCC or
GND
Noise Immunity
Functional Test
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
TEMPERATURE
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC, +125oC, -55oC
+25oC
+125oC, -55oC
+25oC, +125oC, -55oC
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
LIMITS
MIN MAX UNITS
- 10 µA
- 200 µA
4.8 - mA
4.0 - mA
-4.8 - mA
-4.0 - mA
- 0.1 V
- 0.1 V
VCC
-0.1
VCC
-0.1
-
-
-
-
-
±0.5
±5.0
-
V
V
µA
µA
-
Spec Number 518643
431


Part Number HCTS27MS
Description Radiation Hardened Triple 3-Input NOR Gate
Maker Intersil Corporation
Total Page 9 Pages
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