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HCTS273MS - Radiation Hardened Octal D Flip-Flop

General Description

The Intersil HCTS273MS is a Radiation Hardened octal D flipflop, positive edge triggered, with reset.

The HCTS273MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

Key Features

  • 3 Micron Radiation Hardened CMOS SOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s. 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads.
  • Military Temperature Range: -55oC to +125o.

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Full PDF Text Transcription for HCTS273MS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HCTS273MS. For precise diagrams, and layout, please refer to the original PDF.

HCTS273MS September 1995 Radiation Hardened Octal D Flip-Flop Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VI...

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ETAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW MR Q0 D0 D1 Q1 Q2 D2 D3 Q3 1 2 3 4 5 6 7 8 9 20 VCC 19 Q7 18 D7 17 D6 16 Q6 15 Q5 14 D5 13 D4 12 Q4 11 CP Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s.

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