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Intersil Electronic Components Datasheet

CD40107BMS Datasheet

CMOS Dual 2 Input NAND Buffer/Driver

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CD40107BMS
December 1992
CMOS Dual 2 Input NAND Buffer/Driver
Features
Pinouts
• High Voltage Type (20V Rating)
• 32 Times Standard B Series Output Current Drive
Sinking Capability
- 136mA Typ. at VDD = 10V
- VDS = 1V
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Noise Margin (Over Full Package/Temperature Range)
RL to VDD = 10k
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
CD40107BF
TOP VIEW
NC 1
NC 2
A3
B4
C=A• B 5
NC 6
VSS 7
14 VDD
13 NC
12 NC
11 D
10 E
9 F=D• E
8 NC
NC = NO CONNECTION
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Functional Diagram
Applications
• Driving Relays, Lamps, LEDs
• Line Driver
• Level Shifter (Up or Down)
C=A• B
A
B
VSS
Description
F=D• E
CD40107BMS is a dual 2 input NAND buffer/driver contain-
D
E
ing two independent 2 input NAND buffers with open drain
single n-channel transistor outputs. This device features a
VSS
wired OR capability and high output sink current capability
(136mA typ. at VDD = 10V, VDS = 1V).
The CD40107BMS is supplied in these 14 lead outline
packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4H
H1B
H3W
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-18
File Number 3355


Intersil Electronic Components Datasheet

CD40107BMS Datasheet

CMOS Dual 2 Input NAND Buffer/Driver

No Preview Available !

Specifications CD40107BMS
Absolute Maximum Ratings
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Reliability Information
Thermal Resistance . . . . . . . . . . . . . . . .
θja
Ceramic DIP and FRIT Package . . . . . 80oC/W
θjc
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS
Supply Current
IDD VDD = 20V, VIN = VDD or GND
1
2
VDD = 18V, VIN = VDD or GND
3
Input Leakage Current
IIL VIN = VDD or GND VDD = 20
1
2
VDD = 18V
3
Input Leakage Current
IIH VIN = VDD or GND VDD = 20
1
2
VDD = 18V
3
Output Drive Voltage
VOL5A VDD = 5V, IOL = 16mA
1
Output Drive Voltage
VOL5B VDD = 5V, IOL = 34mA
1
VOL10A VDD = 10V, IOL = 37mA
1
Output Drive Voltage VOL10B VDD = 10V, IOL = 68mA
1
VOL15 VDD = 15V, IOL = 50mA
1
Output Current (Source) IOH5A
TEMPERATURE
+25oC
+125oC
-55oC
+25oC
+125oC
-55oC
+25oC
+125oC
-55oC
+25oC
+25oC
+25oC
+25oC
+25oC
LIMITS
MIN MAX UNITS
- 2 µA
- 200 µA
- 2 µA
-100
-
nA
-1000 -
nA
-100
-
nA
- 100 nA
- 1000 nA
- 100 nA
- 0.4 V
- 1.0 V
- 0.5 V
- 1.0 V
- 0.5 V
Output Current (Source) IOH5B
Output Current (Source) IOH10
No Internal Pull-Up Device
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional (Note 3)
Input Voltage Low
(Note 2, 3)
Input Voltage High
(Note 2, 3)
Input Voltage Low
(Note 2, 3)
Input Voltage High
(Note 2, 3)
Tri-State Output
Leakage High
IOH15
VNTH
VPTH
F
VIL
VIH
VIL
VIH
IOZ
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 5V, VOH > 4.5V, VOL < 0.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
VIN = VDD or GND VDD = 20V
VOUT = VDD
VDD = 18V
1
1
7
7
8A
8B
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2
3
+25oC
-2.8 -0.7
+25oC
0.7 2.8
+25oC
+25oC
VOH > VOL <
VDD/2 VDD/2
+125oC
-55oC
+25oC, +125oC, -55oC -
1.5
V
V
V
V
+25oC, +125oC, -55oC 3.5
-
V
+25oC, +125oC, -55oC -
4V
+25oC, +125oC, -55oC 11 - V
+25oC
+125oC
-55oC
- 2 µA
- 20 µA
- 2 µA
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. For accuracy, voltage is measured differentially to VDD. Limit
implemented.
is 0.050V max.
2. Go/No Go test with limits applied to inputs.
7-19


Part Number CD40107BMS
Description CMOS Dual 2 Input NAND Buffer/Driver
Maker Intersil Corporation
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CD40107BMS Datasheet PDF






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