ISL73024SEH datasheet, transistor equivalent, Intersil

Features and benefits

* Very low rDS(ON) 45mΩ (typical)
* Ultra low total gate charge 2.5nC (typical)
* SEE hardness (see SEE report for details)
* SEL/SEB LETTH (VDS = 160V, V.

Application

for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron.

Description

Pin Number 1 2 3 4 NA Pin Name Description S Source connection for the GaN FET. SUB Substrate connection for the GaN FET which is internally shorted in to source. Tie this pin to source on the PCB. D Drain.

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