ISL70023SEH datasheet, transistor equivalent, Intersil

Features and benefits

* Very low rDS(ON) 5mΩ (typical)
* Ultra low total gate charge 14nC (typical)
* SEE tolerance (VDS = 100V, VGS = 0V)
* Characterized at LET 86 MeV
*cm2.

Application

for these devices include commercial aerospace, medical, and nuclear power generation. GaN’s exceptionally high electron.

Description

Pin Number 1 2 3 4 NA Pin Name Description S Source connection for the GaN FET. SUB Substrate connection for the GaN FET which is internally shorted in to source. Tie this pin to source on the PCB. D Drain connection for the GaN FET G Gat.

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