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HCTS191MS - Synchronous 4-Bit Up/Down Counter

Download the HCTS191MS datasheet PDF. This datasheet also covers the HCTS191K variant, as both devices belong to the same synchronous 4-bit up/down counter family and are provided as variant models within a single manufacturer datasheet.

Description

The Intersil HCTS191MS is a Radiation Hardened asynchronously presettable 4 bit binary up/down synchronous counter.

Features

  • Pinouts.
  • 3 Micron Radiation Hardened CMOS SOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit- Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset: >1010 RAD (Si)/s 20ns Pulse.
  • Cosmic Ray Upset Immunity 2 x 10-9 Errors/Bit Day.
  • Latch-Up Free Under Any Conditions.
  • Fanout (Over Temperature Range) - Standard Outputs.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HCTS191K_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
HCTS190MS Radiation Hardened Synchronous 4-Bit Up/Down Counter Intersil Corporation
HCTS193MS Radiation Hardened Synchronous 4-Bit Up/Down Counter Intersil Corporation
HCTS109MS Radiation Hardened Dual JK Flip Flop Intersil Corporation
HCTS109T Radiation Hardened Dual JK Flip Flop Intersil Corporation
HCTS10MS Radiation Hardened Triple 3-Input NAND Gate Intersil Corporation

Other Datasheets by Intersil (Renesas)

Part Number Description
HCTS164MS 8-Bit Serial-In/Parallel-Out Shift Register
HCTS20MS Radiation Hardened Dual 4-Input NAND Gate

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HCTS191MS September 1995 Radiation Hardened Synchronous 4-Bit Up/Down Counter Features Pinouts • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit- Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset: >1010 RAD (Si)/s 20ns Pulse • Cosmic Ray Upset Immunity 2 x 10-9 Errors/Bit Day • Latch-Up Free Under Any Conditions • Fanout (Over Temperature Range) - Standard Outputs - 10 LSTTL Loads • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.
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