Datasheet Details
| Part number | FSJ160D |
|---|---|
| Manufacturer | Intersil (Renesas) |
| File Size | 58.92 KB |
| Description | N-Channel Power MOSFETs |
| Datasheet |
 FSJ160D Datasheet
|
|
|
General Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
Key Features
- 70A, 100V, rDS(ON) = 0.022Ω.
- Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
- Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
- Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
- Photo Current - 9nA Per-RAD(Si)/s Typically.
- Neutron - Maintain Pre-RAD Speci.