FSJ160D Overview
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space.
Key Features
- 70A, 100V, rDS(ON) = 0.022Ω
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
- Photo Current
- 9nA Per-RAD(Si)/s Typically
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
