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D4N06L - RFD4N06L

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 4A, 60V.
  • rDS(ON) = 0.600Ω.
  • Design Optimized for 5 Volt Gate Drive.
  • Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits.
  • SOA is Power Dissipation Limited.
  • 175oC Rated Junction Temperature.
  • Logic Level Gate.
  • High Input Impedance.
  • Related Literature Ordering Information PART NUMBER RFD4N06L RFD4N06LSM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09520. Features • 4A, 60V • rDS(ON) = 0.