n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Seale.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.

JANSR2N7549T1

JANSR2N7549U2

JANSR2N7500U5

JANSR2N7519T3

JANSR2N7520T3

JANSR2N7524T1

JANSR2N7550U2

JANSR2N7583U2

JANSR2N7583U2A

JANSR2N7584T1

JANSR2N7587U3

JANSR2N7589U3

JANSR2N7591U3

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