JANSR2N7425 Datasheet POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

JANSR2N7425 power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	JANSR2N7425
Manufacturer	International Rectifier (now Infineon)
File Size	666.57 KB
Description	POWER MOSFET
Download	JANSR2N7425 Download (PDF)

General Description

IRHM9160 is part of the International Rectifier HiRel family of products.

IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

Overview

PD-91415H IRHM9160 JANSR2N7425 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 100V, P-CHANNEL REF: MIL-PRF-19500/660 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9160 100 kRads(Si) IRHM93160 300 kRads(Si) RDS(on) 0.073 0.

Key Features

Single Event Effect (SEE) Hardened.
Identical Pre- and Post-Electrical Test Conditions.
Low RDS(on).
Repetitive Avalanche Ratings.
Dynamic dv/dt Ratings.
Simple Drive Requirements.
Ease of Paralleling.
Hermetically Sealed.
Electrically Isolated.
Ceramic Package.
Light Weight.
ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC =.

More Datasheets from International Rectifier (now Infineon)

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JANSR2N7475T1	RADIATION HARDENED POWER MOSFET
JANSR2N7476T1	RADIATION HARDENED POWER MOSFET
JANSR2N7477T1	RADIATION HARDENED POWER MOSFET
JANSR2N7478T1	RADIATION HARDENED POWER MOSFET
JANSR2N7489T3	RADIATION HARDENED POWER MOSFET
JANSR2N7261	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
JANSR2N7262	Radiation Hardened Power MOSFET