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International Rectifier Electronic Components Datasheet

JANSR2N7425 Datasheet

POWER MOSFET

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PD-91415H
IRHM9160
JANSR2N7425
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
100V, P-CHANNEL
REF: MIL-PRF-19500/660
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM9160 100 kRads(Si)
IRHM93160 300 kRads(Si)
RDS(on)
0.073
0.073
ID
-35A*
-35A*
QPL Part Number
JANSR2N7425
JANSF2N7425
Description
IRHM9160 is part of the International Rectifier HiRel family
of products. IR HiRel RAD-Hard HEXFET technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
TO-254AA
Features
Single Event Effect (SEE) Hardened
Identical Pre- and Post-Electrical Test Conditions
Low RDS(on)
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-35*
-24
-140
A
250 W
2.0 W/°C
± 20
500
-35
25
-16
-55 to + 150
V
mJ
A
mJ
V/ns
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
°C
g
* Current is limited by package
For Footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-03-09


International Rectifier Electronic Components Datasheet

JANSR2N7425 Datasheet

POWER MOSFET

No Preview Available !

IRHM9160
JANSR2N7425
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
BVDSS
BVDSS/TJ
RDS(on)
 
VGS(th)
Gfs
IDSS
IGSS
QG
QGS
QGD
td(on)
tr
td(off)
tf
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-100
–––
–––
–––
-2.0
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
-0.11 –––
––– 0.073
––– 0.075
––– -4.0
––– –––
––– -25
––– -250
––– -100
––– 100
––– 290
––– 72
––– 77
––– 35
––– 170
––– 190
––– 190
Units
V
V/°C

V
S
µA
nA
nC  
ns
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -24A 
VGS = -12V, ID = -35A 
VDS = VGS, ID = -1.0mA
VDS = -15V, ID = -24A
VDS = -80V, VGS = 0V
VDS = -80V,VGS = 0V,TJ =125°C
VGS = -20V
VGS = 20V
ID = -35A
VDS = -50V
VGS = -12V
VDD = -50V
ID = -35A
RG = 2.35
VGS = -12V
Ls +LD
Total Inductance
––– 6.8 –––
nH  
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
Ciss Input Capacitance
––– 6000 –––
VGS = 0V
Coss Output Capacitance
––– 1400 ––– pF   VDS = -25V
Crss
Reverse Transfer Capacitance
––– 400 –––
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode) ––– ––– -35*
Pulsed Source Current (Body Diode) ––– ––– -140
A 
VSD Diode Forward Voltage
trr Reverse Recovery Time
––– ––– -3.3
––– ––– 300
V TJ = 25°C,IS = -35A, VGS = 0V
ns TJ = 25°C,IF = -35A,VDD -50V
Qrr Reverse Recovery Charge
––– ––– 2.1 µC di/dt = -100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* Current is limited by package
Thermal Resistance  
Parameter
RJC Junction-to-Case
RCS
Case -to-Sink
RJA Junction-to-Ambient (Typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
0.50
–––
48
Units
°C/W
 Footnotes:
 Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L = 0.82mH, Peak IL = -35A, VGS = -12V
ISD -35A, di/dt -480A/µs, VDD -100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-03-09


Part Number JANSR2N7425
Description POWER MOSFET
Maker International Rectifier
PDF Download

JANSR2N7425 Datasheet PDF






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