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JANSR2N7425 - POWER MOSFET

Description

IRHM9160 is part of the International Rectifier HiRel family of products.

IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

Features

  • Single Event Effect (SEE) Hardened.
  • Identical Pre- and Post-Electrical Test Conditions.
  • Low RDS(on).
  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Ratings.
  • Simple Drive Requirements.
  • Ease of Paralleling.
  • Hermetically Sealed.
  • Electrically Isolated.
  • Ceramic Package.
  • Light Weight.
  • ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC =.

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Full PDF Text Transcription

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PD-91415H IRHM9160 JANSR2N7425 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 100V, P-CHANNEL REF: MIL-PRF-19500/660 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM9160 100 kRads(Si) IRHM93160 300 kRads(Si) RDS(on) 0.073 0.073 ID -35A* -35A* QPL Part Number JANSR2N7425 JANSF2N7425 Description IRHM9160 is part of the International Rectifier HiRel family of products. IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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