IRLU2908PbF datasheet, mosfet equivalent, International Rectifier

Features and benefits

l l l l l l l HEXFET® Power MOSFET D IRLR2908PbF IRLU2908PbF VDSS = 80V RDS(on) = 28m Ω Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C .

Application

this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon.

Description

Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction oper.

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