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IRLU2705PBF - HEXFET Power MOSFET

Download the IRLU2705PBF datasheet PDF. This datasheet also covers the IRLR2705PBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Key Features

  • Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR2705PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95062A l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D IRLR2705PbF IRLU2705PbF VDSS = 55V G S RDS(on) = 0.040Ω ID = 28A… Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.