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IRLU2705 - HEXFET Power MOSFET

Download the IRLU2705 datasheet PDF. This datasheet also covers the IRLR2705 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

  • 3 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) LEAD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLR2705_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLU2705 N-Channel MOSFET INCHANGE
IRLU2703 N-Channel MOSFET INCHANGE
IRLU210A Power MOSFET Fairchild Semiconductor
IRLU220A ADVANCED POWER MOSFET Fairchild Semiconductor
IRLU230A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLU2705PBF HEXFET Power MOSFET
IRLU2703 HEXFET Power MOSFET
IRLU2703PBF Power MOSFET
IRLU2905 POWER MOSFET
IRLU2905PBF POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD- 91317C IRLR/U2705 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.040Ω ID = 28A… Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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