Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area..
Features
- D. U. T.
- ISD controlled by Duty Factor "D".
- D. U. T. - Device Under Test
+ - VDD
Driver Gate Drive
P. W. Period
D=
P. W. Period
VGS=10V.
- D. U. T. ISD Waveform
Reverse Recovery Current
Body Diode Forward
Current di/dt
D. U. T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied Voltage
Body Diode Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD.
- VGS = 5V for Logic Level Devices Fig 14. For N-Channel.
