IRLR2908PbF mosfet equivalent, power mosfet.
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HEXFET® Power MOSFET
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IRLR2908PbF IRLU2908PbF
VDSS = 80V RDS(on) = 28m Ω
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C .
this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon.
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction oper.
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