IRLR120NPBF mosfet equivalent, power mosfet.
1
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight lead.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
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