IRLR014N mosfet equivalent, hexfet power mosfet.
T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate C.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
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