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IRLMS2002PbF Datasheet, International Rectifier

IRLMS2002PbF mosfet equivalent, hexfet power mosfet.

IRLMS2002PbF Avg. rating / M : 1.0 rating-11

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IRLMS2002PbF Datasheet

Features and benefits

tion Standards can be found on IR’s Web site. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9024.

Application

The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar .

Description

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load.

Image gallery

IRLMS2002PbF Page 1 IRLMS2002PbF Page 2 IRLMS2002PbF Page 3

TAGS

IRLMS2002PbF
HEXFET
Power
MOSFET
International Rectifier

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