IRLMS2002PbF
Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% pared to the SOT-23.
HEXFET® Power MOSFET
A 1 6D
VDSS = 20V
2 5D
3 4 S RDS(on) = 0.030Ω
Top View
Micro6™
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation
Power Dissipation
Linear Derating...
