l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description .

G PD - 95990A IRLL024ZPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 60mΩ S ID = 5.0A SOT-223 Absolute Maximum Rati.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive a.

IRLL024Z

IRLL024N

IRLL024NPBF

IRLL024NQ

IRLL014

IRLL014N

IRLL014NPBF

IRLL014NTRPBF

IRLL014PBF

IRLL110

IRLL110PBF

IRLL2703

IRLL2703PBF

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