IRLI3615 Datasheet - International Rectifier

IRLI3615 HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRLI3615 Features

* ø 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A 3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 ) 2 .8 0 (.1 1 0 ) 2 .6 0 (.1 0 2 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S O U RC E 7 .10 (.2 8 0 ) 6 .70 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5 ) M

IRLI3615 Datasheet (131.72 KB)