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IRL3803VS - Power MOSFET

Download the IRL3803VS datasheet PDF. This datasheet also covers the IRL3803VL variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

Features

  • -Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ISD ].
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRL3803VS/IRL3803VL D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER F530S DAT E CODE YE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL3803VL_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRL3803VS N-Channel MOSFET INCHANGE
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IRL3803PBF MOSFET Infineon
IRL3103 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3803VSPBF Power MOSFET
IRL3803V Power MOSFET
IRL3803VL Power MOSFET
IRL3803VLPbF Power MOSFET
IRL3803VPBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 94735 HEXFET® Power MOSFET l l l l l l l IRL3803VS IRL3803VL VDSS = 30V Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3803VS) Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 5.5mΩ G S ID = 140A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.