l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Fre.

PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.1mΩ G ID = 120A S TO-.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

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