PbF D.U.T + ‚ -  RG Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations
* Low Stray Inductance ƒ
* Ground Plane
* Low Leakage Induct.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to .

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig.

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