Datasheet4U Logo Datasheet4U.com

IRL1004LPBF - Power MOSFET

Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • RNAT IONAL RE CT IF IE R LOGO PART NUMB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 LINE L AS S E MB L Y L OT CODE OR INT ERNAT IONAL RE CT IF IER LOGO AS S EMB LY L OT CODE PART NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F RE E.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRL1004 N-Channel MOSFET INCHANGE
IRL1004S N-Channel MOSFET INCHANGE
IRL100HS121 MOSFET Infineon
IRL1404 N-Channel MOSFET INCHANGE
IRL1404S N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL1004L Power MOSFET
IRL1004 Power MOSFET
IRL1004PBF Power MOSFET
IRL1004S Power MOSFET
IRL1004SPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95575 Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL1004SPbF IRL1004LPbF HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A… Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Published: |