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Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Volta.
Full PDF Text Transcription for IRHNJ7430SE (Reference)
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PD - 93830B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRHNJ7430SE Radiation Level 100K Rads (Si) RDS(on) 1.77Ω IRHNJ7430SE JANSR...
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J7430SE Radiation Level 100K Rads (Si) RDS(on) 1.77Ω IRHNJ7430SE JANSR2N7466U3 500V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard HEXFET TECHNOLOGY ™ ® ID QPL Part Number 4.4A JANSR2N7466U3 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications suchwww.DataSheet4U.com as
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IRHNJ7430SE Datasheet
