900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRHNJ7430SE Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
PD - 93830B
IRHNJ7430SE
JANSR2N7466U3
500V, N-CHANNEL
REF: MIL-PRF-19500/676
RAD HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ7430SE 100K Rads (Si)
RDS(on)
1.77
ID
4.4A
QPL Part Number
JANSR2N7466U3
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
www.DataSheet4U.com
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
4.4
2.8
17.6
75
0.6
±20
150
4.4
7.5
2.5
-55 to 150
300 (for 5s)
1.0(Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
02/07/03


International Rectifier Electronic Components Datasheet

IRHNJ7430SE Datasheet

RADIATION HARDENED POWER MOSFET SURFACE MOUNT

No Preview Available !

IRHNJ7430SE, JANSR2N7466U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
500
2.5
0.8
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
—— V
0.61 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 1.77
VGS = 12V, ID = 2.8A
— 4.5 V
— — S( )
50
250
µA
— 100
— -100 nA
— 40
— 7.0 nC
— 18
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 2.8A
VDS= 400V ,VGS=0V
VDS = 400V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 4.4A
VDS = 250V
— 20
— 65
— 60 ns
VDD = 250V, ID = 4.4A,
VGS =12V, RG = 7.5
— 60
4.0 — nH Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 570 —
— 150 —
— 50 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode) — — 4.4 A
ISM Pulse Source Current (Body Diode)
— — 17.6
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.2 V
— — 600 nS
— — 3.8 µC
Tj = 25°C, IS = 4.4A, VGS = 0V
Tj = 25°C, IF = 4.4A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
Test Conditions
— — 1.67
°C/W
— 6.9 —
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com


Part Number IRHNJ7430SE
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Maker International Rectifier
Total Page 8 Pages
PDF Download

IRHNJ7430SE Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 IRHNJ7430SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy