IRHNA67160 Datasheet | International Rectifier

.. - 94299A RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67160 100K Rads (Si) IRHNA63160 300K Rads (Si) RDS(on) 0.01Ω 0.01Ω ID 56A- 56A- IRHNA67160 100V, N-CHANNEL TECHNOLOGY SMD-2 International Rectifier’s R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their bination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as...