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IRHNA597160 - POWER MOSFET

This page provides the datasheet information for the IRHNA597160, a member of the IRHNA593160 POWER MOSFET family.

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC =100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse.

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Full PDF Text Transcription

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www.DataSheet4U.com PD-94493A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level Rds(on) IRHNA597160 100K Rads (Si) 0.049Ω IRHNA593160 300K Rads (Si) 0.049Ω ID Q -47A -47A IRHNA597160 100V, P-CHANNEL 5 TECHNOLOGY ™ SMD-2 International Rectifier’s R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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