IRHNA58260 mosfet equivalent, n-channel power mosfet.
n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermeticall.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.
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