Datasheet Details
| Part number | IRHNA54260 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 255.41 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
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Download the IRHNA54260 datasheet PDF. This datasheet also covers the IRHNA53260 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
| Part number | IRHNA54260 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 255.41 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet |
|
|
|
|
www.DataSheet4U.com PD - 91838C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57260 100K Rads (Si) IRHNA53260 300K Rads (Si) IRHNA54260 600K Rads (Si) IRHNA58260 1000K Rads (Si) RDS(on) 0.038Ω 0.038Ω 0.038Ω 0.043Ω ID 55A 55A 55A 55A IRHNA57260 200V, N-CHANNEL R5 TECHNOLOGY SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
| Part Number | Description |
|---|---|
| IRHNA54064 | RADIATION HARDENED POWER MOSFET |
| IRHNA54160 | RADIATION HARDENED POWER MOSFET |
| IRHNA54Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNA53064 | RADIATION HARDENED POWER MOSFET |
| IRHNA53160 | RADIATION HARDENED POWER MOSFET |
| IRHNA53260 | N-CHANNEL POWER MOSFET |
| IRHNA53Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNA57064 | RADIATION HARDENED POWER MOSFET |
| IRHNA57160 | RADIATION HARDENED POWER MOSFET |
| IRHNA57260 | N-CHANNEL POWER MOSFET |