IRHNA54160
Features
: n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight
- Current is limited by package For footnotes refer to the last page 75- 69 300 250 2.0 ±20 363 75 25 6.0 -55 to 150 300 (for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W/°C
V m J A m J V/ns o
C g
.irf.
06/09/04
Data Sheet 4 U .
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IRHNA57160, JANSR2N7469U2
Pre-Irradiation
Electrical Characteristics @...
