| Part number | IRHNA53160 |
|---|---|
| Datasheet | IRHNA53160_InternationalRectifier.pdf |
| File Size | 328.21 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | RADIATION HARDENED POWER MOSFET |
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These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and...
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHNA53064 | RADIATION HARDENED POWER MOSFET |
| IRHNA53260 | N-CHANNEL POWER MOSFET |
| IRHNA53Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNA54064 | RADIATION HARDENED POWER MOSFET |
| IRHNA54160 | RADIATION HARDENED POWER MOSFET |
| IRHNA54260 | N-CHANNEL POWER MOSFET |
| IRHNA54Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNA57064 | RADIATION HARDENED POWER MOSFET |
| IRHNA57160 | RADIATION HARDENED POWER MOSFET |
| IRHNA57260 | N-CHANNEL POWER MOSFET |
