Datasheet4U Logo Datasheet4U.com

IRHNA53064 Datasheet RADIATION HARDENED POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

📥 Download Datasheet

Overview

www.DataSheet4U.com PD - 91852G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57064 100K Rads (Si) IRHNA53064 300K Rads (Si) IRHNA54064 600K Rads (Si) IRHNA57064 JANSR2N7468U2 60V, N-CHANNEL REF: MIL-PRF-19500/673 5 TECHNOLOGY ™ RDS(on) ID QPL Part Number 0.0056Ω 75*A JANSR2N7468U2 0.0056Ω 75*A JANSF2N7468U2 0.0056Ω 75*A JANSG2N7468U2 IRHNA58064 1000K Rads (Si) 0.0065Ω 75*A JANSH2N7468U2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRHNA53160 RADIATION HARDENED POWER MOSFET
IRHNA53260 N-CHANNEL POWER MOSFET
IRHNA53Z60 RADIATION HARDENED POWER MOSFET
IRHNA54064 RADIATION HARDENED POWER MOSFET
IRHNA54160 RADIATION HARDENED POWER MOSFET
IRHNA54260 N-CHANNEL POWER MOSFET
IRHNA54Z60 RADIATION HARDENED POWER MOSFET
IRHNA57064 RADIATION HARDENED POWER MOSFET
IRHNA57160 RADIATION HARDENED POWER MOSFET
IRHNA57260 N-CHANNEL POWER MOSFET